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N-channel 14A - 600V - TO-220/TO-220FP/D2PAK very fast PowerMESH" IGBT

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STGP7NC60HD STGF7NC60HD - STGB7NC60HD
N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESHTM IGBT
Table 1: General Features
TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD
s s s

Figure 1: Package
IC @100C 14 A 6A 14 A
3 1 2

VCES 600 V 600 V 600 V

VCE(sat) (Max) @25C < 2.5 V < 2.5 V < 2.5 V

s s

s

s

LOW ER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY LOW ER CRES/CIES RATIO HIGH FREQUENCY OPERATION UP TO 70 KHz VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION

3 1 2

TO-220

TO-220FP

3 1

D2PAK Figure 2: Internal Schematic Diagram

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

APPLICATIONS HIGH FREQUENCY INVERTERS s SM PS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s MO TO R DRIVERS
s

Table 2: Order Code
PART NUMBER STGP7NC60HD STGF7NC60HD STGB7NC60HDT4 M AR KING GP7NC60HD GF7NC60HD GB7NC60HD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL

Rev.9 June 2005 1/15

STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
Table 3: Absolute Maximum ratings
Symbol Parameter Value STGP7NC60HD STGB7NC60HD VCES VECR VGE IC IC ICM ( ) IF PTOT VISO Tstg Tj ( Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C (#) Collector Current (continuous) at TC = 100C (#) Collector Current (pulsed) Diode RMS Forward Current at TC = 25C Total Dissipation at TC = 25C Derating Factor Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25C) Storage Temperature Operating Junction Temperature 80 0.64 - 55 to 150 25 14 50 20 25 0.20 2500 600 20 20 10 6 STGF7NC60HD V V V A A A A W W/C V C Unit

) Pulse width limited by max. junction temperature.

Table 4: Thermal Data
Min. Rthj-case Thermal Resistance Junction-case TO-220 D²PAK TO-220FP Rthj-amb TL Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 Typ. Max. 1.56 5.0 62.5 C/W C/W C/W C

ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: Main Parameters
Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 1 mA, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 VCE = VGE, IC = 250 A VGE = 15V, IC = 7 A VGE = 15V, IC = 7 A, Tc= 125C 3.75 1.85 1.7 Min. 600 10 1 100 5.75 2.5 Typ. Max. Unit V A mA nA V V V

(#) Calculated according to the iterative formula: T T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ C C E SA T (M A X) C C

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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic
Symbol gfs (1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current VCE = 390 V, IC = 7 A, VGE = 15 V (see Figure 22) Vclamp = 480 V , Tj = 150C RG = 10 , VGE = 15 V 50 Test Conditions VCE = 15 V , IC = 7 A VCE = 25 V, f= 1 MHz, VGE = 0 Min. Typ. 4.30 720 81 17 35 7 16 48 Max. Unit S pF pF pF nC nC nC A

(1) Pulsed: Pulse duration= 300 s, duty cycle 1.5%

Table 7: Switching On
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Test Conditions VCC = 390 V, IC = 7 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 19) VCC = 390 V, IC = 7 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 20) Min. Typ. 18.5 8.5 1060 18.5 7 1000 Max. Unit ns ns A/s ns ns A/s

Table 8: Switching Off
Symbol tr(Voff) td(off) tf tr(Voff) td(off) tf Parameter Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions Vcc = 390 V, IC = 7 A, RG = 10 , VGE = 15 V TJ = 25 C (see Figure 20) Vcc = 390 V, IC = 7 A, RG = 10 , VGE = 15 V Tj = 125 C (see Figure 20) Min. Typ. 27 72 60 56 116 105 Max. Unit ns ns ns ns ns ns

Table 9: Switching Energy
Symbol Eon (2) Eoff (3) Ets Eon (2) Eoff (3) Ets Parameter Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Test Conditions VCC = 390 V, IC = 7 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 19) VCC = 390 V, IC = 7 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 20) Min. Typ. 95 115 210 140 215 355 Max 125 150 275 Unit J J J J J J

(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C) (3) Turn-off losses include also the tail of the collector current.

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STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
Table 10: Collector-Emitter Diode
Symbol Parameter Test Condiction Min. Typ. Max. 1.9 Unit

Vf trr ta Q rr I rr m S trr ta Q rr I rr m S

Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode

If = 3.5 A If = 3.5 A, Tj = 125 C If = 7 A, VR = 40 V, Tj = 25 C, di/dt = 100 A/s

1. 3 1. 1 37 22 40 2. 1 0.68 61 34 98 3. 2 0.79

V V ns ns nC A

If = 7 A, VR = 40 V, Tj = 125 C, di/dt = 100 A/s

ns ns nC A

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Figure 3: Output Characteristics Figure 6: Transfer Characteristics

Figure 4: Transconductance

Figure 7: Collector-Emitter On Voltage vs Temp e rat u re

Figure 5: Collector-Emitter On Voltage vs Collector Current

Figure 8: Normalized Gate Threshold vs Temp e rat u re

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Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage

Figure 10: Capacitance Variations

Figure 13: Total Switching Losses vs Temperature

Figure 11: Total Switching Losses vs Gate Resistance

Figure 14: Total Switching Losses vs Collector C u rren t

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Figure 15: Thermal Impedance For TO-220/ D²P AK Figure 17: Turn-Off SOA

Figure 16: Thermal Impedance For TO-220FP

Figure 18: Characteristics

Emitter-Collector

Diode

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Figure 19: Ic vs Frequency

For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: PD = T / RTHJ-C considering T = TJ - TC = 125 C- 75 C = 50C 2) The conduction losses are: PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @ 125 C . 3) Power dissipation during ON & OFF commutations is due to the switching frequency: PSW = (EON + EOFF) * freq. 4) Typical values @ 125C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3).

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Figure 20: Test Circuit for Inductive Load Switching Figure 22: Gate Charge Test Circuit

Figure 21: Switching Waveforms

Figure 23: Diode Recovery Time Waveforms

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TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154

øP
Q

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STGP7NC60HD - STGF7NC60HD - STGB7NC60HD

TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø

A

B

L3 L6 L7

F1

D

F

G1 H
F2
L2 L5

E
123
L4

G

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STGP7NC60HD - STGF7NC60HD - STGB7NC60HD

TO-2 63 (D 2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b2 c c2 D D1 E e H L L1 L2 L4 V2 13.10 1.30 1.15 1.27 2.70 0 4.32 0.00 0.71 1.15 0.46 1.22 8.89 8.01 10.04 2.54 13.7 0 1.70 1.39 1.77 3.10 8 0.51 5 0.05 1 0.04 5 0.05 0 0.10 6 0 10.2 8 9.02 TY P M AX. 4.57 0.25 0.91 1.40 0.61 1.40 9.40 MI N. 0.17 8 0.0 0 0.02 8 0.04 5 0.01 8 0.04 8 0.35 0 0.31 5 0.39 5 0.0 10 0.5 40 0.0 67 0.0 54 0.0 69 0.1 22 8 0.4 04 0.3 55 TYP. MAX. 0.1 80 0.0 09 0.3 50 0.0 55 0.0 24 0.0 55 0.3 70 inch

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D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0. 504 0795 0. 960 3. 937 1.197 BULK QTY 1000 1.039 0.520 i n ch MIN. MAX. 12. 992

TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 0.35 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0.075 1.574 0.0098 0.0137 0.933 0. 956 MAX. 0. 421 0. 626 0. 063 0. 063 0. 073 0. 456 0. 197 0. 161 0. 476 0. 082

BASE QTY 1000

* on sales type

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Table 11: Revision History
Date 07-Jun-2004 19-Aug-2004 17-Sep-2004 09-Nov-2004 19-Jan-2005 09-Jun-2005 Revision 4 5 6 7 8 9

9
Description of Changes Stylesheet update. No content change Complete Version Figure 18 has been added Final datasheet Datasheet updated Modified title

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

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