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N-channel 3A - 600V - DPAK PowerMESH™ IGBT

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STGD3NB60SD
N-CHANNEL 3A - 600V - DPAK PowerMESHTM IGBT
TYPE STGD3NB60SD
s

VCES 600 V

VCE(sat) < 1.5 V

IC 3A

s s s s

HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VER Y LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE OFF LOSSES INCLUDE TAIL CURRENT

3 1

DP AK

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS s M O TO R C ON T R OL s GA S D IS CHA RGE LA MP s S TA TI C REL AY S

ORDERING INFORMATION
S A LES TYP E STGD3NB60SDT4 M A RKING GD3NB60SD PACKAGE DPAK PACKAGING TAPE & REEL

May 2004

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STGD3NB60SD
ABSOLUTE MAXIMUM RA TINGS
Symbol V CE S V GE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 6 3 25 48 0.32 65 to 175 175 Unit V V A A A W W/C C C

(q ) Pulse width limited by safe operating area

THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 3.125 100 C/W C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA

ON ( 1 )
Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE = 15V, IC = 1.5 A VGE = 15V, IC = 3 A VGE = 15V, IC = 7 A, TJ =125 C Min. 2.5 1 1.2 1.1 Typ. Max. 4.5 1.5 Unit V V V V

DYN AMIC
Symbol gfs Cies Coes Cres QG QGE QGC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current VCE = 480 V, IC = 3 A, VGE = 15V Vclamp = 380 V , Tj = 25C RG = 1K 15 Test Conditions VCE = 10 V , IC = 3 A VCE = 25V, f = 1 MHz, VGE = 0 Min. 1.7 Typ. 2.5 255 30 5.6 18 5.4 5.5 23 Max. Unit S pF pF pF nC nC nC A

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STGD3NB60SD
ELECTRICAL CHARACTERISTICS (CONTINUED) SW ITCHIN G ON
Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 3 A RG = 1K , VGE = 15 V VCC= 480 V, IC = 3 A, RG=1K VGE = 15 V, Tj = 125C Min. Typ. 125 150 50 1100 Max. Unit s s A/s J

SW ITCHIN G OFF
Symbol tc tr(Voff) td(on) tf Eoff(**) tc tr(Voff) td(on) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Test Conditions Vcc = 480 V, IC = 3 A, RGE = 1K , VGE = 15 V Min. Typ. 1.8 1.0 3.4 0.72 1.15 2.8 1.45 3.6 1.2 1.8 Max. Unit

s s s s
mJ

Vcc = 480 V, IC = 3 A, RGE = 1K , VGE = 15 V, Tj = 125C

s s s s
mJ

COLLECTOR-EMITTER DIODE
Symbol If Ifm Vf trr Q rr Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A If = 1 A If = 3 A ,VR = 200 V, Tj =125C, di/dt = 100A/s 1.55 1.15 1700 4500 9.5 Test Conditions Min. Typ. Max. 3 25 1.9 Unit A A V V ns nC A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by m ax. junction temperature. (**) Losses also include the Tail (Jedec Standardization)

Thermal Impedance

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STGD3NB60SD
Output Characteristics Transfer Characteristics

Transconductance

Collector-Emitter On Voltage vs Temperature

Collector-Emitter On Voltage vs Collettor Current

Gate Threshold vs Temperature

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STGD3NB60SD
Normalized Breakdown Voltage vs Temperature Capacitance Variations

Gate Charge vs Gate-Emitter Voltage

Off Losses vs Collector Current

Off Losses vs Temperature

Switching Off Safe Operating A rea

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STGD3NB60SD
Diode Forward Voltage vs Tj Diode Forward Voltage

Fig. 1: Gate Charge test Circuit

Fig. 2: Test C ircuit For Inductive Load Switching

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STGD3NB60SD

TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o

DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35

i nch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o

TYP.

TYP.

MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398

0.8 0.024 0
o

0.039 0o

P032P_B

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STGD3NB60SD

DPAK FOOTPRINT

TUBE SHIPMENT (no suffix)*

All dimensions are in millimeters

All dimension s are in millimeters

TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12. 8 20. 2 16. 4 50 22. 4 18. 4 13. 2 mm MIN. M AX . 330 0. 059 0. 504 0. 520 0. 795 0. 645 0. 724 1. 968 0. 881 BULK QTY 25 00 inch M I N. M AX . 12.992

TAPE MECHANICAL DATA
D IM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W

BASE QTY 2 500

mm MIN. 6.8 10. 4 1.5 1.5 1. 65 7.4 2. 55 3.9 7.9 1.9 40
15.7 16.3

inch MIN. M AX . 7 0. 267 0. 275 0. 409 0. 417 0. 476 0. 059 0. 063 0. 059 0. 065 0. 073 0. 291 0. 299 0. 100 0. 108 0. 153 0. 161 0.311 0.319 0. 075 0. 082 1. 574 0.618
0.641

MA X. 10.6 12.1 1. 6 1. 85 7. 6 2. 75 4. 1 8. 1 2. 1

* o n s al es t y pe
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STGD3NB60SD

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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Document Number: 10480

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