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N-channel 600V - 7A - D²PAK very fast PowerMESH" IGBT

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STGB6NC60H
N-channel 600V - 7A - D2PAK Ver y fast PowerMESHTM IGBT
General features
Type STGB6NC60H

VCES 600V

VCE(sat)max @25C <2.5V

IC @100C 7A

Low on voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode High frequency operation
3 1

D²PAK

Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

Internal schematic diagram

Applications

High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers

Order codes
Part number STGB6NC60HT4 Marking GB6NC60H Package D²PAK Packaging Tape & reel

July 2006

Rev 2

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www.st.com 14

Contents

STGB 6N C60H

Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6

3 4 5 6

Test circuit

. . .. . .. . .. . .. . .. . .. . .. . .. . .... 9

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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STGB6NC60H

Electrical ratings

1

Electrical ratings
Table 1.
Symbol VCES IC(1) IC(1) ICM(2) VGE PTOT Tstg Tj Tl

Absolute maximum ratings
Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25C Collector current (continuous) at TC = 100C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25C Storage temperature Operating junction temperature Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case)
T T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ C CESAT(MAX) C C

Value 600 15 7 21 20 56 55 to 150

Unit V A A A V W C

300

C

1. Calculated according to the iterative formula::

2. Pulse width limited by max junction temperature

Table 2.
Symbol Rthj-case Rthj-amb

Thermal resistance
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 2 62.5 Unit C/W C/W

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Electrical characteristics

STGB6NC60H

2

Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs

Static
Parameter Collector-emitter breakdown voltage Test conditions IC = 1mA, VGE = 0 Min. 600 1.9 1.7 3.75 2.5 Typ. Max. Unit V V V V A mA nA S

Collector-emitter saturation VGE = 15V, IC= 3A voltage VGE= 15V, IC= 3A, Tc= 125C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 A VCE = Max rating,TC= 25C VCE = Max rating,TC= 125C VGE = 20V , VCE= 0 VCE = 15V, IC= 3A

5.75 10 1 100 3

Table 4.
Symbol Cies Coes Cres Qg Qge Qgc ICL

Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Turn-off SOA minimum current Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 3A, VGE = 15V, (see Figure 16) Vclamp = 390V, Tj = 150C, , RG = 10 VGE = 15V Min. Typ. Max. 205 32 5.5 13.6 3.4 5.1 19 Unit pF pF pF nC nC nC A

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STGB6NC60H

Electrical characteristics

Table 5.
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf

Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 3A , RG= 10 VGE = 15V, Tj = 25C (see Figure 17) VCC = 390V, IC = 3A , RG = 10 VGE = 15V, Tj =125C (see Figure 17) VCC = 390V, IC = 3A, RGE = 10 , VGE = 15V, TJ = 25C (see Figure 17) VCC = 390V, IC = 3A, RGE = 10 , VGE =15V, Tj = 125C (see Figure 17) Min. Typ. 12 5 612 13 4.3 560 40 76 100 60 98 124 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns

Table 6.
Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets

Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test condictions VCC = 390V, IC = 3A , RG = 10 VGE=15V, Tj =25C (see Figure 17) VCC = 390V, IC = 3A , RG = 10 VGE = 15V, Tj = 125C (see Figure 17) Min. Typ. 20 68 88 37 93 130 Max. Unit J J J J J J

1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 17. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current

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Electrical characteristics

STGB6NC60H

2.1
Figure 1.

Electrical characteristics (curves)
Output characterisics Figure 2. Transfer characteristics

Figure 3.

Transconductance

Figure 4.

Collector-emitter on voltage vs temperature

Figure 5.

Gate charge vs gate-source voltage Figure 6.

Capacitance variations

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STGB6NC60H Figure 7. Normalized gate threshold voltage vs temperature Figure 8.

Electrical characteristics Collector-emitter on voltage vs collector current

Figure 9.

Normalized breakdown voltage vs temperature

Figure 10. Switching losses vs temperature

Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current

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Electrical characteristics Figure 13. Thermal impedance Figure 14. Turn-off SOA

STGB6NC60H

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STGB6NC60H

Test circuit

3

Test circuit
Figure 16. Gate charge test circuit

Figure 15. Test circuit for inductive load switching

Figure 17. Switching waveform

Figure 18. Diode recovery time waveform

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Package mechanical data

STGB6NC60H

4

Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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STGB6NC60H

Package mechanical data

D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 T YP M AX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch

3

1

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Packaging mechanical data

STGB6NC60H

5

Packaging mechanical data
D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0795 0.960 1.039 3. 937 1.197 BULK QTY 1000 i n ch MIN. MAX. 12. 992

TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956

BASE QTY 1000

* on sales type

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STGB6NC60H

Revision history

6

Revision history
Table 7.
Date 18-Nov-2005 27-jul-2006

Revision history
Revision 1 2 First Release New template Changes

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STGB6NC60H

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