Datasheets | Transistors | IGBTs | IGBTs, 600V

N-channel 600V - 7A - TO-220 Ultra fast PowerMESH IGBT

Datasheet

Format: (313 kb)

Last Updated: 11/05/2007

Pages: 14

Raw Ascii Text- ( Hide )
(Unformatted textual content of the document used by search engines)

STGF19NC60WD
N-channel 600V - 7A - TO-220 Ultra fast PowerMESHTM IGBT
PRELIMINARY DATA

Features
Type STGF19NC60WD

VCES 600V

IC @100C (max)@25C < 2.5V 7A
3 1 2

VCE(sat)

High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-220FP

Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application.

Internal schematic diagram

Applications

High frequency motor controls, inverters, UPS HF, SMPS and PFC in both hard switch and resonant topologies

Order code
Part number STGF19NC60WD Marking GF19NC60WD Package TO-220 Packaging Tube

May 2007

Rev 2

1/14
www.st.com 14

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Contents

STGF19NC60WD

Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 7

3 4 5

Test circuit

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14

STGF19NC60WD

Electrical ratings

1

Electrical ratings
Table 1.
Symbol VCES IC(1) IC(1) ICL (2) IF VGE PTOT Tstg Tj

Absolute maximum ratings
Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25C Collector current (continuous) at TC = 100C Collector current (pulsed) Diode RMS forward current at TC = 25C Gate-emitter voltage Total dissipation at TC = 25C Storage temperature 55 to 150 Operating junction temperature C Value 600 14 7 35 12 20 32 Unit V A A A A V W

1. Calculated according to the iterative formula:
T T J ---- A --C I ( T ) = -----------------------------------------M------X----------------------------------------------CC R ×V (T , I ) THJ C CESAT(MAX) C C

2. Vclamp=480V, Tj=150C, RG=10, VGE=15V

Table 2.
Symbol Rthj-case Rthj-amb

Thermal resistance
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 4 62.5 Unit C/W C/W

3/14

Electrical characteristics

STGF19NC60WD

2

Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs

Static
Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 2.1 1.8 3.75 2.5 Typ. Max. Unit V V V V A mA nA S

Collector-emitter saturation VGE= 15V, IC= 12A voltage VGE= 15V, IC=12A,Tc=125C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 A VCE= Max rating,TC= 25C VCE= Max rating,TC= 125C VGE= 20V, VCE= 0 VCE = 15V, IC= 12A

5.75 150 1 100 10

Table 4.
Symbol Cies Coes Cres Qg Qge Qgc

Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 5A, VGE = 15V, Figure 16 Min. Typ. 1180 130 26 53 10 21 Max. Unit pF pF pF nC nC nC

4/14

STGF19NC60WD

Electrical characteristics

Table 5.
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf

Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 12A , RG= 10 VGE= 15V, Figure 17 VCC = 390V, IC = 12A , RG= 10 VGE= 15V, Tj = 125C Figure 17 VCC = 390V, IC = 12A RG= 10 VGE= 15V, , Figure 17 VCC = 390V, IC = 12A , RG= 10 VGE= 15V, Tj = 125C Figure 17 Min. Typ. 25 7 1600 25 8 1400 22 90 43 47 127 77 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns

Table 6.
Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets

Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 12A , RG= 10 VGE= 15V, Figure 17 VCC = 390V, IC = 12A RG= 10 VGE= 15V, , Tj = 125C Figure 17 Min. Typ. 81 125 206 161 255 416 Max. Unit J J J J J J

1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 15 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current

5/14

Electrical characteristics

STGF19NC60WD

Table 7.
Symbol Vf t rr Qrr I rr m t rr Qrr I rr m

Collector-emitter diode
Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 12A If = 12A, Tj = 125C If = 12A,VR = 50V, Tj = 25C, di/dt = 100 A/s Figure 18 If = 12A,VR = 50V, Tj =125C, di/dt = 100A/s Figure 18 Min. Typ. 1.9 1.5 31 30 2 59 102 4 Max. 2.5 Unit V V ns nC A ns nC A

6/14

STGF19NC60WD

Electrical characteristics

2.1
Figure 1.

Electrical characteristics (curves)
Output characteristics Figure 2. Transfer characteristics

Figure 3.

Transconductance

Figure 4.

Collector-emitter on voltage vs temperature

Figure 5.

Gate charge vs gate-source voltage Figure 6.

Capacitance variations

7/14

Electrical characteristics Figure 7. Normalized gate threshold voltage vs temperature Figure 8.

STGF19NC60WD Collector-emitter on voltage vs collector current

Figure 9.

Normalized breakdown voltage vs temperature

Figure 10. Switching losses vs temperature

Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current

8/14

STGF19NC60WD Figure 13. Turn-off SOA

Electrical characteristics Figure 14. Emitter-collector diode characteristics

9/14

Test circuit

STGF19NC60WD

3

Test circuit
Figure 16. Gate charge test circuit

Figure 15. Test circuit for inductive load switching

Figure 17. Switching waveform

Figure 18. Diode recovery time waveform

10/14

STGF19NC60WD

Package mechanical data

4

Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

11/14

Package mechanical data

STGF19NC60WD

TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø

A

B

L3 L6 L7
F1 F

D

G1 H
F2
L2 L5

E
123
L4

12/14

G

STGF19NC60WD

Revision history

5

Revision history
Table 8.
Date 13-Oct-2006 08-May-2007

Revision history
Revision 1 2 Initial release. Corrected value on Table 1, Table 2 Changes

13/14

STGF19NC60WD

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com

14/14

Document Number: 12818

Untitled Document

Further Information
Contact Online Support (Registration Required)



All rights reserved © 2010 STMicroelectronics :: Terms Of Use :: Privacy Policy