M24M01-R, M24M01-W M24M01-HR
1 Mbit serial I²C bus EEPROM
Features
Compatible with I2C extended addressing Two-wire I2C serial interface: M 24M01-HR: 1 MHz clock, compatible with the Fastmode Plus I2C protocol M24M01-R, M24M01-W: 400 kHz clock, compatible with the Fastmode I2C protocol Single supply voltage: 1.8 V to 5.5 V 2.5 V to 5.5 V Hardware write control Byte and Page Write (up to 256 bytes) Random and Sequential Read modes Self-timed programming cycle Automatic address incrementing Enhanced ESD/Latch-Up protection More than 1 million Write cycles More than 40-year data retention Packages ECOPACK (RoHS compliant) Wafer
SO8 (MN) 150 mils width
SO8 (MW) 208 mils width
September 2008
Rev 5
1/36
www.st.com 1
Contents
M24M01-R, M24M01-W, M24M01-HR
Contents
1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 2.2 2.3 2.4 2.5 2.6 Serial Clock (SCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Serial Data (SDA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Chip Enable (E1, E2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Write Control (WC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.6.1 2.6.2 2.6.3 2.6.4 Operating supply voltage VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Power-down conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3
Device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 3.10 3.11 3.12 3.13 3.14 3.15 Star t condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Stop condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Acknowledge bit (ACK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Memory addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Write operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Byte Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Page Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 ECC (error correction code) and Write cycling . . . . . . . . . . . . . . . . . . . . . 16 Minimizing system delays by polling on ACK . . . . . . . . . . . . . . . . . . . . . . 18 Read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Random Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Current Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Sequential Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Acknowledge in Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
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M24M01-R, M24M01-W, M24M01-HR
Contents
5 6 7 8 9 10
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 M24M01-R die description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3/36
List of tables
M24M01-R, M24M01-W, M24M01-HR
List of tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Device select code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Most significant address byte . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Least significant address byte . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Operating conditions (M24M01-R and M24M01-HR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Operating conditions (M24M01-W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Input parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 DC characteristics (M24M01-R and M24M01-HR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 DC characteristics (M24M01-W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 AC characteristics at 400 kHz (M24M01-R and M24M01-W) . . . . . . . . . . . . . . . . . . . . . . . 24 AC characteristics at 1 MHz (M24M01-HR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 SO8N 8-lead plastic small outline, 150 mils body width, package data. . . . . . . . . . . . . . 27 SO8W 8-lead plastic small outline, 208 mils body width, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Pad coordinates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Ordering information scheme (M24M01-x products sold in packages). . . . . . . . . . . . . . . . 31 Ordering information scheme (M24M01-R sold as bare dice) . . . . . . . . . . . . . . . . . . . . . . 32 Available M24M01-x products (package, voltage range, frequency, temperature grade) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
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M24M01-R, M24M01-W, M24M01-HR
List of figures
List of figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 SO connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Device select code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 M24M01-R/M24M01-W Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz . . . . . . . . . . . . . . 10 M24M01-HR Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 1MHz . . . . . . . . . . . . . . . . . . . . . . . . . . 10 I2C bus protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Write mode sequences with WC = 1 (data write inhibited) . . . . . . . . . . . . . . . . . . . . . . . . . 14 Write mode sequences with WC = 0 (data write enabled) . . . . . . . . . . . . . . . . . . . . . . . . . 16 Write cycle polling flowchart using ACK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Read mode sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 SO8N 8-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . . 27 SO8W 8-lead plastic small outline, 208 mils body width, package outline . . . . . . . . . . . 28 M24M01-R die plot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
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Description
M24M01-R, M24M01-W, M24M01-HR
1
Description
The M24M01-R, M24M01-HR and M24M01-W are I2C-compatible electrically erasable programmable memory (EEPROM) devices organized as 128 Kb × 8 bits. The I2C bus is a two-wire serial interface, comprising a bidirectional data line and a clock line. The devices carry a built-in 4-bit device type identifier code (1010) in accordance with the I2C bus definition. The M24M01-R, M24M01-HR and M24M01-W behave as slaves in the I2C protocol, with all memory operations synchronized by the serial clock. Read and Write operations are generated by the bus master and initiated by a Start condition, followed by the device select code, address bytes and data bytes. Data transfers are terminated by a Stop condition after an Ack for Write, and after a NoAck for Read. When writing data to the memory, the device inserts an acknowledge bit during the 9th bit time, following the bus master's 8-bit transmission. When data is read by the bus master, the bus master acknowledges the receipt of the data byte in the same way. The M24M01-R, M24M01-HR and M24M01-W are delivered in SO8 packages and the M24M01-R is also available in wafer form (see Table 20: Available M24M01-x products (package, voltage range, frequency, temperature grade) for details).
Caution:
As EEPROM cells loose their charge (and so their binary value) when exposed to ultra violet (UV) light, EEPROM dice delivered in wafer form by STMicroelectronics must never be exposed to UV light. Figure 1. Logic diagram
VCC
2 E1-E2 SCL WC M24M01-R M24M01-HR M24M01-W SDA
VSS
AI13415d
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M24M01-R, M24M01-W, M24M01-HR Table 1. Signal names
Signal name E1, E2 SDA SCL WC VCC VSS Function Chip Enable Serial Data Serial Clock Write Control Supply voltage Ground Input I/O Input Input
Description
Direction
Figure 2.
SO connections
M24M01-R M24M01-R M24M01-HR NC E1 E2 VSS 1 2 3 4 8 7 6 5 VCC WC SCL SDA
AI13416d
1. See Section 7: Package mechanical data for package dimensions, and how to identify pin-1. 2. NC = Not connected internally.
7/36
Signal description
M24M01-R, M24M01-W, M24M01-HR
2
2.1
Signal description
Serial Clock (SCL)
This input signal is used to strobe all data in and out of the device. In applications where this signal is used by slave devices to synchronize the bus to a slower clock, the bus master must have an open drain output, and a pull-up resistor must be connected from Serial Clock (SCL) to VCC. (Figure 5 indicates how the value of the pull-up resistor can be calculated). In most applications, though, this method of synchronization is not employed, and so the pullup resistor is not necessary, provided that the bus master has a push-pull (rather than open drain) output.
2.2
Serial Data (SDA)
This bidirectional signal is used to transfer data in or out of the device. It is an open drain output that may be wire-OR'ed with other open drain or open collector signals on the bus. A pull up resistor must be connected from Serial Data (SDA) to VCC. (Figure 5 indicates how the value of the pull-up resistor can be calculated).
2.3
Chip Enable (E1, E2)
These input signals are used to set the value that is to be looked for on the two bits (b2, b1) of the 7-bit device select code. These inputs must be tied to VCC or VSS, to establish the device select code as shown in Figure 3. When not connected (left floating), these inputs are read as low (0,0). Figure 3. Device select code
VCC VCC
M24xxx Ei
M24xxx Ei
VSS
VSS
Ai12806
2.4
Write Control (WC)
This input signal is useful for protecting the entire contents of the memory from inadvertent write operations. Write operations are disabled to the entire memory array when Write Control (WC) is driven high. When unconnected, the signal is internally read as VIL, and Write operations are allowed. When Write Control (WC) is driven high, device select and address bytes are acknowledged, Data bytes are not acknowledged.
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M24M01-R, M24M01-W, M24M01-HR
Signal description
2.5
VSS ground
VSS is the reference for the VCC supply voltage.
2.6
2.6.1
Supply voltage (VCC)
Operating supply voltage VCC
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage within the specified [VCC(min), VCC(max)] range must be applied (see Table 7). In order to secure a stable DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor (usually of the order of 10 nF to 100 nF) close to the VCC/VSS package pins. This voltage must remain stable and valid until the end of the transmission of the instruction and, for a Write instruction, until the completion of the internal write cycle (tW).
2.6.2
Power-up conditions
When the power supply is turned on, VCC rises from VSS to VCC. The VCC rise time must not vary faster than 1 V/s.
2.6.3
Device reset
In order to prevent inadvertent write operations during power-up, a power-on-reset (POR) circuit is included. At power-up (continuous rise of VCC), the device does not respond to any instruction until VCC has reached the power on reset threshold voltage (this threshold is lower than the minimum VCC operating voltage defined in Table 7). When VCC passes over the POR threshold, the device is reset and in Standby Power mode. In a similar way, during power-down (continuous decrease in VCC), as soon as VCC drops below the power-on-reset threshold voltage, the device stops responding to any instruction sent to it.
2.6.4
Power-down conditions
During power-down (continuous decrease in VCC), the device must be in the Standby Power mode (mode reached after decoding a Stop condition, assuming that is there is no internal write cycle in progress).
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Signal description Figure 4.
M24M01-R, M24M01-W, M24M01-HR M24M01-R/M24M01-W Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz
Bus line pull-up resistor (k )
100
fC = 400 kHz, tLOW = 1.3 s Rbus x Cbus time c ons t ant must be less than 500 ns
VC C
10
Rbus I²C bus master SCL SDA
M24xxx
1 10 100 Bus line capacitor (pF) 1000
Cbus
ai14796
Figure 5.
M24M01-HR Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 1MHz
VCC
fC = 1 MHz, tLOW = 500 ns, time constant Rbus x Cbus mus t be less than 150 ns
Bus line pull-up resistor (k )
100
Rbus I²C bus master SCL SDA Cb u s
10
fC = 1 MHz, extended case where tLOW = 700 ns, time constant Rbus x Cbus mus t be less than 270 ns
M24xxx
1 10 Bus line capacitor (pF)
ai14795b
100
10/36
M24M01-R, M24M01-W, M24M01-HR Figure 6. I2C bus protocol
Signal description
SCL
SDA SDA Input SDA Change
START Condition
STOP Condition
SCL
1
2
3
7
8
9
SDA
MSB
ACK
START Condition
SCL
1
2
3
7
8
9
SDA
MSB
ACK
STOP Condition
AI00792B
Table 2.
Device select code
Device type identifier(1) b7 b6 0 b5 1 b4 0 Chip Enable address(2) b3 E2 b2 E1 A16 b1 A16 RW b0 RW
Device select code 1
1. The most significant bit, b7, is sent first. 2. E1 and E2 are compared against the respective external pins on the memory device.
Table 3.
b15
Most significant address byte
b14 b13 b12 b11 b10 b9 b8
Table 4.
b7
Least significant address byte
b6 b5 b4 b3 b2 b1 b0
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Device operation
M24M01-R, M24M01-W, M24M01-HR
3
Device operation
The device supports the I2C protocol. This is summarized in Figure 6. Any device that sends data on to the bus is defined to be a transmitter, and any device that reads the data to be a receiver. The device that controls the data transfer is known as the bus master, and the other as the slave device. A data transfer can only be initiated by the bus master, which will also provide the serial clock for synchronization. The M24M01-R, M24M01-HR and M24M01-W devices are always slaves in all communications.
3.1
Start condition
Star t is identified by a falling edge of Serial Data (SDA) while Serial Clock (SCL) is stable in the high state. A Start condition must precede any data transfer command. The device continuously monitors (except during a Write cycle) Serial Data (SDA) and Serial Clock (SCL) for a Start condition, and will not respond unless one is given.
3.2
Stop condition
Stop is identified by a rising edge of Serial Data (SDA) while Serial Clock (SCL) is stable and driven high. A Stop condition terminates communication between the device and the bus master. A Read command that is followed by NoAck can be followed by a Stop condition to force the device into the Standby mode. A Stop condition at the end of a Write command triggers the internal EEPROM Write cycle.
3.3
Acknowledge bit (ACK)
The acknowledge bit is used to indicate a successful byte transfer. The bus transmitter, whether it be bus master or slave device, releases Serial Data (SDA) after sending eight bits of data. During the 9th clock pulse period, the receiver pulls Serial Data (SDA) low to acknowledge the receipt of the eight data bits.
3.4
Data input
During data input, the device samples Serial Data (SDA) on the rising edge of Serial Clock (SCL). For correct device operation, Serial Data (SDA) must be stable during the rising edge of Serial Clock (SCL), and the Serial Data (SDA) signal must change only when Serial Clock (SCL) is driven low.
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M24M01-R, M24M01-W, M24M01-HR
Device operation
3.5
Memory addressing
To start communication between the bus master and the slave device, the bus master must initiate a Start condition. Following this, the bus master sends the device select code, shown in Table 2 (on Serial Data (SDA), most significant bit first). The device select code consists of a 4-bit device type identifier, and a 2-bit Chip Enable "Address" (E2, E1). To address the memory array, the 4-bit device type identifier is 1010b. Up to four memory devices can be connected on a single I2C bus. Each one is given a unique 2-bit code on the Chip Enable (E1, E2) inputs. When the device select code is received, the device only responds if the Chip Enable Address is the same as the value on the Chip Enable (E1, E2) inputs. The 8th bit is the Read/Write bit (RW). This bit is set to 1 for Read and 0 for Write operations. If a match occurs on the device select code, the corresponding device gives an acknowledgment on Serial Data (SDA) during the 9th bit time. If the device does not match the device select code, it deselects itself from the bus, and goes into Standby mode. Table 5. Operating modes
Mode Current Address Read Random Address Read 1 Sequential Read Byte Write Page Write
1. X = VIH or VIL.
RW bit 1 0
WC(1) X X
Bytes 1 1
Initial sequence Star t, device select, RW = 1 Star t, device select, RW = 0, Address reStar t, device select, RW = 1
X X VIL VIL 1 1 256
1 0 0
Similar to Current or Random Address Read Star t, device select, RW = 0 Star t, device select, RW = 0
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Device operation Figure 7.
WC ACK Byte Write
Start
M24M01-R, M24M01-W, M24M01-HR Write mode sequences with WC = 1 (data write inhibited)
ACK Byte addr Byte addr
ACK Data in
NO ACK
Dev sel R/W
WC ACK Page Write
Start
ACK Byte addr Byte addr
ACK
NO ACK Data in 1 Data in 2
Dev sel R/W
WC (cont'd) NO ACK Page Write (cont'd) NO ACK
Data in N
Stop
Stop
AI01120d
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M24M01-R, M24M01-W, M24M01-HR
Device operation
3.6
Write operations
Following a Start condition the bus master sends a device select code with the R/W bit (RW) reset to 0. The device acknowledges this, as shown in Figure 8, and waits for two address bytes. The device responds to each address byte with an acknowledge bit, and then waits for the data byte. Writing to the memory may be inhibited if Write Control (WC) is driven high. Any Write instruction with Write Control (WC) driven high (during a period of time from the Start condition until the end of the two address bytes) will not modify the memory contents, and the accompanying data bytes are not acknowledged, as shown in Figure 7. Each data byte in the memory has a 17-bit address (the most significant bit b16 is in the device select code and the Least Significant Bits b15-b0 are defined in two address bytes). The most significant byte (Table 3) is sent first, followed by the least significant byte (Table 4). When the bus master generates a Stop condition immediately after the Ack bit (in the "10th bit" time slot), either at the end of a Byte Write or a Page Write, the internal memory Write cycle is triggered. A Stop condition at any other time slot does not trigger the internal Write cycle. After the Stop condition, the delay tW, and the successful completion of a Write operation, the device's internal address counter is incremented automatically, to point to the next byte address after the last one that was modified. During the internal Write cycle, Serial Data (SDA) is disabled internally, and the device does not respond to any requests.
3.7
Byte Write
After the device select code and the address bytes, the bus master sends one data byte. If the addressed location is Write-protected, by Write Control (WC) being driven high, the device replies with NoAck, and the location is not modified. If, instead, the addressed location is not Write-protected, the device replies with Ack. The bus master terminates the transfer by generating a Stop condition, as shown in Figure 8.
3.8
Page Write
The Page Write mode allows up to 256 bytes to be written in a single Write cycle, provided that they are all located in the same 'row' in the memory: that is, the most significant memory address bits, b16-b8, are the same. If more bytes are sent than will fit up to the end of the row, a condition known as `roll-over' occurs. This should be avoided, as data starts to become overwritten in an implementation dependent way. The bus master sends from 1 to 256 bytes of data, each of which is acknowledged by the device if Write Control (WC) is low. If Write Control (WC) is high, the contents of the addressed memory location are not modified, and each data byte is followed by a NoAck. After each byte is transferred, the internal byte address counter (the 8 least significant address bits only) is incremented. The transfer is terminated by the bus master generating a Stop condition.
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Device operation Figure 8.
WC ACK Byte Write
Start
M24M01-R, M24M01-W, M24M01-HR Write mode sequences with WC = 0 (data write enabled)
ACK Byte addr Byte addr
ACK Data in
ACK
Dev sel R/W
WC ACK Page Write
Start
ACK Byte addr Byte addr
ACK Data in 1
ACK Data in 2
Dev sel R/W
WC (cont'd)
ACK Page Write (cont'd) Data in N
ACK
Stop
Stop
AI01106d
3.9
ECC (error correction code) and Write cycling
The M24M01-R, M24M01-HR and M24M01-W devices offer an ECC (error correction code) logic which compares each 4-byte word with its six associated EEPROM ECC bits. As a result, if a single bit out of 4 bytes of data happens to be erroneous during a Read operation, the ECC detects it and replaces it by the correct value. The read reliability is therefore much improved by the use of this feature. Note however that even if a single byte has to be written, 4 bytes are internally modified (plus the ECC word), that is, the addressed byte is cycled together with the three other bytes making up the word. It is therefore recommended to write by packets of 4 bytes in order to benefit from the larger amount of Write cycles. The M24M01-R, M24M01-HR and M24M01-W devices are qualified at 1 million (1 000 000) Write cycles, using a cycling routine that writes to the device by multiples of 4-byte words.
16/36
M24M01-R, M24M01-W, M24M01-HR Figure 9. Write cycle polling flowchart using ACK
Write cycle in progress
Device operation
Start condition Device select with RW = 0
NO First byte of instruction with RW = 0 already decoded by the device
ACK returned YES
NO
Next Operation is addressing the memory
YES
ReStart
Send Address and Receive ACK
Stop
NO
StartCondition
YES
Data for the Write cperation
Ddevice select with RW = 1
Continue the Write operation
Continue the Random Read operation
AI01847d
17/36
Device operation
M24M01-R, M24M01-W, M24M01-HR
3.10
Minimizing system delays by polling on ACK
During the internal Write cycle, the device disconnects itself from the bus, and writes a copy of the data from its internal latches to the memory cells. The maximum Write time (tw) is shown in Table 13, but the typical time is shorter. To make use of this, a polling sequence can be used by the bus master. The sequence, as shown in Figure 9, is:
Initial condition: a Write cycle is in progress. Step 1: the bus master issues a Start condition followed by a device select code (the first byte of the new instruction). Step 2: if the device is busy with the internal Write cycle, no Ack will be returned and the bus master goes back to Step 1. If the device has terminated the internal Write cycle, it responds with an Ack, indicating that the device is ready to receive the second part of the instruction (the first byte of this instruction having been sent during Step 1).
Figure 10. Read mode sequences
ACK Current Address Read
Start
NO ACK Data out
Dev sel R/W
ACK Random Address Read
Start
ACK Byte addr Byte addr
Stop
ACK Dev sel *
Start
ACK Data out R/W
NO ACK
Dev sel * R/W
ACK Sequential Current Read
Start
ACK Data out 1
ACK
NO ACK Data out N
Stop
Dev sel R/W
ACK Sequention Random Read
Start
ACK Byte addr Byte addr
ACK Dev sel *
Start
ACK Data out1 R/W
ACK
Dev sel * R/W
ACK
NO ACK Data out N
Stop
AI01105d
1. The seven most significant bits of the device select code of a Random Read (in the be identical.
1st
and
4th
bytes) must
18/36
Stop
M24M01-R, M24M01-W, M24M01-HR
Device operation
3.11
Read operations
Read operations are performed independently of the state of the Write Control (WC) signal. After the successful completion of a Read operation, the device's internal address counter is incremented by one, to point to the next byte address.
3.12
Random Address Read
A dummy Write is first performed to load the address into this address counter (as shown in Figure 10) but without sending a Stop condition. Then, the bus master sends another Start condition, and repeats the device select code, with the RW bit set to 1. The device acknowledges this, and outputs the contents of the addressed byte. The bus master must not acknowledge the byte, and terminates the transfer with a Stop condition.
3.13
Current Address Read
For the Current Address Read operation, following a Start condition, the bus master only sends a device select code with the R/W bit set to 1. The device acknowledges this, and outputs the byte addressed by the internal address counter. The counter is then incremented. The bus master terminates the transfer with a Stop condition, as shown in Figure 10, without acknowledging the byte.
3.14
Sequential Read
This operation can be used after a Current Address Read or a Random Address Read. The bus master does acknowledge the data byte output, and sends additional clock pulses so that the device continues to output the next byte in sequence. To terminate the stream of bytes, the bus master must not acknowledge the last byte, and must generate a Stop condition, as shown in Figure 10. The output data comes from consecutive addresses, with the internal address counter automatically incremented after each byte output. After the last memory address, the address counter `rolls-over', and the device continues to output data from memory address 00h.
3.15
Acknowledge in Read mode
For all Read commands, the device waits, after each byte read, for an acknowledgment during the 9th bit time. If the bus master does not drive Serial Data (SDA) low during this time, the device terminates the data transfer and switches to its Standby mode.
19/36
Initial delivery state
M24M01-R, M24M01-W, M24M01-HR
4
Initial delivery state
The device is delivered with all the memory array bits set to 1 (each byte contains FFh).
5
Maximum rating
Stressing the device outside the ratings listed in Table 6 may cause permanent damage to the device. These are stress ratings only, and operation of the device at these, or any other conditions outside those indicated in the operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 6.
Symbol TA TSTG T LEAD VIO VCC VESD
Absolute maximum ratings
Parameter Ambient operating temperature Storage temperature Lead temperature during soldering Input or output range Supply voltage Electrostatic discharge voltage (Human Body model)(2) Min. 40 65 see note 0.50 0.50 3000 Max. 130 150
(1)
Unit C C C V V V
VCC + 0.6 6.5 3000
1. Compliant with JEDEC Std J-STD-020D (for small body, Sn-Pb or Pb assembly), the ST ECOPACK 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU. 2. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114A, C1=100pF, R1=1500, R2=500)
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M24M01-R, M24M01-W, M24M01-HR
DC and AC parameters
6
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristic tables that follow are derived from tests performed under the measurement conditions summarized in the relevant tables. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 7.
Symbol VCC TA Supply voltage Ambient operating temperature
Operating conditions (M24M01-R and M24M01-HR)
Parameter Min. 1.8 40 Max. 5.5 85 Unit V C
Table 8.
Symbol VCC TA
Operating conditions (M24M01-W)
Parameter Supply voltage Ambient operating temperature Min. 2.5 40 Max. 5.5 125 Unit V C
Table 9.
Symbol CL
AC measurement conditions
Parameter Load capacitance Input rise and fall times Input levels Input and output timing reference levels Min. 100 50 0.2VCC to 0.8VCC 0.3VCC to 0.7VCC Max. Unit pF ns V V
Figure 11. AC measurement I/O waveform
Input Levels 0.8VCC Input and Output Timing Reference Levels 0.7VCC 0.3VCC
AI00825B
0.2VCC
Table 10.
Symbol CIN CIN ZL ZH
Input parameters
Parameter(1) Input capacitance (SDA) Input capacitance (other pins) Input impedance (WC) VIN < 0.3 VCC VIN > 0.7VCC 30 400 Test condition Min. Ma x . 8 6 Unit pF pF k k
1. Sampled only, not 100% tested.
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DC and AC parameters Table 11.
Symbol
M24M01-R, M24M01-W, M24M01-HR DC characteristics (M24M01-R and M24M01-HR)
Parameter Test condition (in addition to those in Table 7) VIN = VSS or VCC device in Standby mode SDA in Hi-Z, external voltage applied on SDA: VSS or VCC VCC = 1.8 V, fc= 400 kHz (rise/fall time < 50 ns) VCC = 2.5 V, fc= 400 kHz (rise/fall time < 50 ns) Min. Max. Unit
ILI ILO
Input leakage current (E1, E2, SCL, SDA) Output leakage current
2 2 0.8 1 2 2.5 5(1) 1 2 3 0.45 0.45 0.75VCC 0.7VCC 0.25 VCC 0.3 VCC VCC+1 VCC+1 0.2 0.4 0.4
A A mA mA mA mA mA A A A V
ICC
Supply current (Read) VCC = 5.5 V, fc= 400 kHz (rise/fall time < 50 ns) 1.8 V < VCC < 5.5 V, fc= 1 MHz (rise/fall time < 50 ns)
ICC0
Supply current (Write)
During tW, 1.8V < VCC < 5.5V VIN = VSS or VCC, VCC = 1.8 V
ICC1
Standby supply current
VIN = VSS or VCC, VCC = 2.5 V VIN = VSS or VCC, VCC = 5.5 V
VIL
Input low voltage (SCL, SDA, WC) Input high voltage (SCL, SDA, WC)
1.8 V VCC < 2.5 V 2.5 V VCC 5.5 V 1.8 V VCC < 2.5 V 2.5 V VCC 5.5 V IOL = 1.0 mA, VCC = 1.8 V
V
VIH
V V V
VOL
Output low voltage
IOL = 2.1 mA, VCC = 2.5 V IOL = 3.0 mA, VCC = 5.5 V
1. Characterized value, not tested in production.
22/36
M24M01-R, M24M01-W, M24M01-HR Table 12.
Symbol
DC and AC parameters
DC characteristics (M24M01-W)
Parameter Input leakage current (E1, E2, SCL, SDA) Output leakage current Test condition (in addition to those in Table 8) VIN = VSS or VCC device in Standby mode SDA in Hi-Z, external voltage applied on SDA: VSS or VCC VCC = 2.5 V, fc= 400 kHz (rise/fall time < 50 ns) Min. Max. Unit
ILI ILO
2 2 1 2 2.5 5(1) 5 5 0.45 0.7VCC 0.3 VCC VCC+1 0.4 0.4
A A mA mA mA mA A A
ICC
Supply current (Read)
VCC = 5.5 V, fc= 400 kHz (rise/fall time < 50 ns) 2.5 V < VCC < 5.5 V, fc= 1 MHz (rise/fall time < 50 ns)
ICC0
Supply current (Write)
During tW, 2.5 V < VCC < 5.5 V VIN = VSS or VCC, VCC = 2.5 V VIN = VSS or VCC, VCC = 5.5 V
ICC1
Standby supply current
VIL VIH VOL
Input low voltage (SCL, SDA, WC) Input high voltage (SCL, SDA, WC) Output low voltage
2.5 V VCC 5.5 V 2.5 V VCC 5.5 V IOL = 2.1 mA, VCC = 2.5 V IOL = 3.0 mA, VCC = 5.5 V
V V
1. Characterized value, not tested in production.
23/36
DC and AC parameters Table 13.
M24M01-R, M24M01-W, M24M01-HR AC characteristics at 400 kHz (M24M01-R and M24M01-W)
Test conditions specified in Table 7 and Table 8
Symbol fC tCHCL tCLCH tXH1XH2(1) tXL1XL2(1) tQL1QL2(2) tDXCH tCLDX tCLQX tCLQV(3)(4) tCHDL(5) tDLCL tCHDH tDHDL tW tNS(6)
Alt. fSCL tHIGH tLOW tR tF tF tSU:DAT tHD:DAT tDH tAA tSU:STA tHD:STA tSU:STO tBUF tWR Clock frequency
Parameter
Min.
Max. 400
Unit kHz ns ns
Clock pulse width high Clock pulse width low Input signal rise time Input signal fall time SDA (out) fall time Data in set up time Data in hold time Data out hold time Clock low to next data valid (access time) Star t condition setup time Star t condition hold time Stop condition setup time Time between Stop condition and next Start condition Write time Pulse width ignored (input filter on SCL and SDA)
600 1300 1000 300 20 100 0 200 200 600 600 600 1300 5 100 900 120
ns ns ns ns ns ns ns ns ns ns ns ms ns
1. Input rise/fall time values recommended by the I²C-bus specification in Standard mode (100 kHz mode). The M24xxx devices accept these maximum input rise/fall times when running at a higher clock frequency provided that these rise/fall times are compatible with all the other timing conditions defined in this AC table. 2. The SDA(out) rise time is not defined by the M24xxx, it is defined by the application pull-up resistor (connected on the SDA line) and, therefore, it is not specified in this table. 3. To avoid spurious Start and Stop conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of SDA. 4. tCLQV is the time (from the falling edge of SCL) required by the SDA bus line to reach 0.8VCC in a compatible way with the I2C specification (which specifies tSU:DAT (min) = 100 ns), assuming that the Rbus × Cbus time constant is less than 500 ns (as specified in Figure 4). 5. For a reStart condition, or following a Write cycle. 6. Characterized only, not tested in production.
24/36
M24M01-R, M24M01-W, M24M01-HR Table 14. AC characteristics at 1 MHz (M24M01-HR)
Test conditions specified in Table 7 Symbol fC tCHCL tCLCH tXH1XH2(1) tXL1XL2(1) tQL1QL2 tDXCH tCLDX tCLQX tCLQV(4)(5) tCHDL(6) tDLCL tCHDH tDHDL tW tNS(2)
(2)(3)
DC and AC parameters
Alt. f SCL tHIGH tLOW tR tF tF tSU:DAT
Parameter Clock frequency Clock pulse width high Clock pulse width low Input signal rise time Input signal fall time SDA (out) fall time Data in setup time 0
Min. 1 -
Max.
Unit MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns
300 400 80 0 50 50 250 250 250 500 -
300 120 120 500 5 50
tHD:DAT Data in hold time tDH tAA tSU:STA tHD:STA tSU:STO tBUF tW R Data out hold time Clock low to next data valid (access time) Star t condition setup time Star t condition hold time Stop condition setup time Time between Stop condition and next Start condition Write time Pulse width ignored (input filter on SCL and SDA)
1. Input rise/fall time values recommended by the Fast-mode Plus I²C-bus specification. The M24xxx devices accept longer input rise/fall times provided that these rise/fall times are compatible with all other timing conditions defined in this AC table. 2. Characterized only, not tested in production. 3. The SDA(out) rise time is not defined by the M24xxx, it is defined by the application pull-up resistor (connected on the SDA line) and, therefore, it is not specified in this table. 4. To avoid spurious Start and Stop conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of SDA. 5. tCLQV is the time (from the falling edge of SCL) required by the SDA bus line to reach 0.8VCC, assuming that the Rbus × Cbus time constant is less than 150 ns (as specified in Figure 5). 6. For a reStart condition, or following a Write cycle.
25/36
DC and AC parameters Figure 12. AC waveforms
tXL1XL2 tXH1XH2 SCL tDLCL SDA In tCHDL Start condition tXH1XH2 SDA Input tCLDX SDA tDXCH Change tCHCL tCLCH
M24M01-R, M24M01-W, M24M01-HR
tXL1XL2
tCHDH tDHDL Start Stop condition condition
SCL
SDA In tW tCHDH Stop condition Write cycle tCHDL Start condition
tCHCL SCL tCLQV SDA Out Data valid tCLQX Data valid
AI00795e
tQL1QL2
26/36
M24M01-R, M24M01-W, M24M01-HR
Package mechanical data
7
Package mechanical data
In order to meet environmental requirements, ST offers the M24M01-R, M24M01-HR and M24M01-W in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Figure 13. SO8N 8-lead plastic small outline, 150 mils body width, package outline
h x 45 A2 b e 0.25 mm GAUGE PLANE k
8
A ccc c
D
E1
1
E A1 L L1
SO-A
1. Drawing is not to scale.
Table 15.
Symbol
SO8N 8-lead plastic small outline, 150 mils body width, package data
millimeters Typ Min Max 1.75 0.1 1.25 0.28 0.17 0.48 0.23 0.1 4.9 6 3.9 1.27 4.8 5.8 3.8 0.25 0 0.4 1.04 5 6.2 4 0.5 8 1.27 0.0409 0.1929 0.2362 0.1535 0.05 0.189 0.2283 0.1496 0.0098 0 0.0157 0.25 0.0039 0.0492 0.011 0.0067 0.0189 0.0091 0.0039 0.1969 0.2441 0.1575 0.0197 8 0.05 Typ inches(1) Min Max 0.0689 0.0098
A A1 A2 b c ccc D E E1 e h k L L1
1. Values in inches are converted from mm and rounded to 4 decimal digits.
27/36
Package mechanical data
M24M01-R, M24M01-W, M24M01-HR
Figure 14. SO8W 8-lead plastic small outline, 208 mils body width, package outline
A2 b e D
A c CP
N
E E1
1
A1
k
L
6L_ME
1. Drawing is not to scale. 2. The `1' that appears in the top view of the package shows the position of pin 1 and the `N' indicates the total number of pins.
Table 16.
SO8W 8-lead plastic small outline, 208 mils body width, package mechanical data
millimeters inches(1) Max 2.5 0 1.51 0.4 0.2 0.35 0.1 0.25 2 0.51 0.35 0.1 6.05 5.02 7.62 1.27 0 0.5 8 6.22 8.89 10 0.8 0.05 0.1976 0.3 0 0.0197 8 0.0157 0.0079 0 0.0594 0.0138 0.0039 Typ Min Max 0.0984 0.0098 0.0787 0.0201 0.0138 0.0039 0.2382 0.2449 0.35 10 0.0315
Symbol Typ A A1 A2 b c CP D E E1 e k L N Min
1. Values in inches are converted from mm and rounded to 4 decimal digits.
28/36
M24M01-R, M24M01-W, M24M01-HR
M24M01-R die description
8
Caution:
M24M01-R die description
As EEPROM cells loose their charge (and so their binary value) when exposed to ultra violet (UV) light, EEPROM dice delivered in wafer form by STMicroelectronics must never be exposed to UV light.
Product
M 24M01-A
203 mm (8 inches) M24M01, processed in the Rousset fab
Wafer size Die identification
Die Layout
Die size (X × Y) Scribe line Pad opening DI Pads
2085 × 3605 m (including scribe line) 80.0 × 80.0 m 90 × 90 m Die identification (at the position shown in Figure 15) Pad contacts (at the positions shown in Figure 15 and Table 17)
Figure 15. M24M01-R die plot
VCC E0 E1 WC
Y
X
SCL E2 VSS SDA
Die identification: M24M01
ai15446
1. Refer to Table 17: Pad coordinates for the pad locations.
29/36
M24M01-R die description Table 17. Pad coordinates(1)
X (m) 784.02 922 922.78 922.78 920.06 920.06 922.8 922.8
M24M01-R, M24M01-W, M24M01-HR
Signal VCC WC SCL SDA VSS E2 E1 E0
Y (m) 1683 1383.1 1171.22 1450.14 1548.98 1358.7 1270.7 1563.02
Pads 8 7 6 5 4 3 2 1
1. Pad locations are measured relative to the die center (where X and Y are the horizontal and vertical axis, respectively, measured in m). Refer to Figure 15.
30/36
M24M01-R, M24M01-W, M24M01-HR
Part numbering
9
Part numbering
Table 18.
Example: Device type M24 = I2C serial access EEPROM Device function M01 = 1 Mbit (256 Kb × 8 bits) Clock frequency Blank: fC max = 400 kHz H: fC max = 1 MHz Operating voltage W = VCC = 2.5 V to 5.5 V R = VCC = 1.8 V to 5.5 V Package MN = SO8 (150 mils width) MW = SO8 (208 mils width) Device grade 6 = Industrial temperature range, 40 to 85 C. Device tested with standard test flow 3 = Automotive: device tested with high reliability certified flow(1) over 40 to 125 C Option blank = standard packing T = tape and reel packing Plating technology P or G = ECOPACK (RoHS compliant) Process(2) A = F8L
1. ST strongly recommends the use of automotive grade devices for use in automotive environments. The high reliability certified flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy. 2. The Process letter only concerns device grade 3 devices.
Ordering information scheme (M24M01-x products sold in packages)
M24M01 H R MN 6 T P /A
31/36
Part numbering Table 19.
Example: Device type M24 = I2C serial access EEPROM Device function M01 = 1 Mbit (256 Kb × 8 bits) Clock frequency Blank: fC max = 400 kHz Operating voltage R = VCC = 1.8 V to 5.5 V Process letter A = F8L Delivery form W = unsawn wafer Wafer thickness 21 = 280 m Temperature range /90 = 40 to 85 C
M24M01-R, M24M01-W, M24M01-HR Ordering information scheme (M24M01-R sold as bare dice)
M24M01 R A W 21 /90
For a list of available options (speed, package, etc.) or for further information on any aspect of the devices, please contact your nearest ST sales office.
32/36
M24M01-R, M24M01-W, M24M01-HR Table 20.
Part numbering
Available M24M01-x products (package, voltage range, frequency, temperature grade)
M24M01-HR 1.8 V to 5.5 V at 1 MHz Range 6 -
Package SO8N (MN) SO8W (MW) Wafer
M24M01-R
1.8 V to 5.5 V at 400 kHz Range 6 Range 6 Range 6
M24M01-W 2.5 V to 5.5 V at 400 kHz Range 3 -
33/36
Revision history
M24M01-R, M24M01-W, M24M01-HR
10
Revision history
Table 21.
Date 07-Dec-2006
Document revision history
Revision 1 Initial release. Document status promoted from Preliminary Data to full Datasheet. Section 2.6: Supply voltage (VCC) updated. Note 1 updated to latest standard revision below Table 6: Absolute maximum ratings. VIL, VIH modified and, rise/fall time corrected in Test conditions in Table 11: DC characteristics (M24M01-R and M24M01-HR). Package values in inches calculated from mm and rounded to 4 decimal digits (note added below package mechanical data tables in Section 7: Package mechanical data. 1 MHz maximum clock frequency added: Figure 5: M24M01-HR Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 1MHz Table 14: AC characteristics at 1 MHz (M24M01-HR) added. tNS moved from Table 10: Input parameters to Table 13: AC characteristics at 400 kHz (M24M01-R and M24M01-W). Note removed below Table 10. In Table 13, tCH1CH2, tCL1CL2 and tDL1DL2 removed, tXH1XH2, tXL1XL2 added, tDL1DL2 max modified, notes modified. Figure 4: M24M01-R/M24M01-W Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz modified. Figure 12: AC waveforms modified. Small text changes. M24M01-HR root part number added. Small text changes. Figure 5: M24M01-HR Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 1MHz modified. Most significant address bits modified in Section 3.8: Page Write on page 15. Test conditions modified for ILI, ICC and VOL in Table 11: DC characteristics (M24M01-R and M24M01-HR). TW and TNS values corrected in Table 13: AC characteristics at 400 kHz (M24M01-R and M24M01-W). Cross-reference corrected in Note 5 below Table 14: AC characteristics at 1 MHz (M24M01-HR). Changes
02-Oct-2007
2
26-Nov-2007
3
18-Mar-2008
4
34/36
M24M01-R, M24M01-W, M24M01-HR Table 21.
Date
Revision history
Document revision history (continued)
Revision Changes Added: M24M01-W part number in device grade 3 temperature range (see Table 8: Operating conditions (M24M01-W), Table 12: DC characteristics (M24M01-W) and Table 18: Ordering information scheme (M24M01-x products sold in packages)). M24M01-R offered as a bare die (see Section 8: M24M01-R die description and Table 19: Ordering information scheme (M24M01-R sold as bare dice)). In Table 13: AC characteristics at 400 kHz (M24M01-R and M24M01W), Note 1 modified, Note 2 added, tXH1XH2, tXL1XL2 and tDL1DL2 values modified. In Table 14: AC characteristics at 1 MHz (M24M01-HR), Note 1 modified, Note 3 added, tXH1XH2, tXL1XL2 and tDL1DL2 values modified. tCHDX, tDL1DL2 and tDXCX changed to tCHDL, tQL1QL2 and tDXCH, respectively (see Table 13, Table 14 and Figure 12). Table 20: Available M24M01-x products (package, voltage range, frequency, temperature grade) added. Small text changes.
02-Sep-2008
5
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M24M01-R, M24M01-W, M24M01-HR
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