Datasheets | Transistors | IGBTs | IGBTs, 600V

20 A, 600 V fast IGBT

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STGB19NC60S STGP19NC60S
20 A, 600 V fast IGBT
Features

Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies.
3
3 1

TAB

Application

1

2

Medium frequency motor drives

TO-220

D2PAK

Description
This IGBT utilizes the advanced PowerMESHTM process resulting in an excellent trade-off between switching performance and low on-state behavior.

Figure 1.

Internal schematic diagram

Table 1.

Device summary
Order codes Marking GB19NC60S GP19NC60S Package D2PAK TO-220 Packaging Tape and reel Tube

STGB19NC60ST4 STGP19NC60S

August 2009

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Contents

STGB19NC60S, STGP19NC60S

Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

3 4 5

Test circuits

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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Electrical ratings

1

Electrical ratings
Table 2.
Symbol VCES IC(1) IC(1) ICP (2) ICL (3) VGE PTOT Tj

Absolute maximum ratings
Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at TC = 25C Collector current (continuous) at TC = 100C Pulsed collector current Turn-off latching current Gate-emitter voltage Total dissipation at TC = 25C Operating junction temperature Value 600 50 20 80 80 20 125 55 to 150 Unit V A A A A V W C

1. Calculated according to the iterative formula

Tj ( m ) T I C ( T C ) = -------------------------------------------------a-x-------------C---------------------------------------R t h j c × V C E ( s a t ) ( m a x ) ( T j ( m a x ), I C ( T C ) )
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA 3. Vclamp = 80% of VCES, Tj =150 C, RG=10 , VGE=15 V

Table 3.
Symbol Rthj-c Rthj -a

Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient Value 1 62.5 Unit C/W C/W

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Electrical characteristics

STGB19NC60S, STGP19NC60S

2

Electrical characteristics
(Tj = 25C unless otherwise specified) Table 4.
Symbol

Static
Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter V(BR)CES breakdown voltage (VGE= 0) VCE(sat) VGE(th) ICES IGES gfs

IC= 1mA

600

V

Collector-emitter saturation VGE= 15V, IC= 12A voltage VGE= 15V, IC=12A,Tj =125C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 A VCE= 600 V VCE= 600 V, Tj =125C VGE= 20V, VCE= 0 VCE = 15V, IC= 12A 3.75

1.55 1.35

1.9

V V V A mA nA S

5.75 150 1 100 10

Table 5.
Symbol Cies Coes Cres Qg Qge Qgc

Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 480V, IC = 12A, VGE = 15V, Figure 18 Min. Typ. 1190 135 28.5 54.5 8.7 25.8 Max. Unit pF pF pF nC nC nC

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Electrical characteristics

Table 6.
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf

Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 480V, IC = 12A , RG= 10 VGE= 15V, Figure 19 VCC = 480V, IC = 12A , RG= 10 VGE= 15V, Tj = 125C Figure 19 VCC = 480V, IC = 12A RG= 10 VGE= 15V, , Figure 19 VCC = 480V, IC = 12A , RG= 10 VGE= 15V, Tj = 125C Figure 19 Min. Typ. 17.5 6.2 1870 17 6.5 1700 90 175 215 155 245 290 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns

-

-

-

-

Table 7.
Symbol Eon Eoff(1) Ets Eon Eoff(1) Ets

Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 480V, IC = 12A , RG= 10 VGE= 15V, Figure 17 VCC = 480V, IC = 12A , RG= 10 VGE= 15V, Tj = 125C Figure 17 Min. Typ. 135 815 995 200 1175 1375 Max. Unit J J J J J J

-

-

1. Turn-off losses include also the tail of the collector current

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Electrical characteristics

STGB19NC60S, STGP19NC60S

2.1
Figure 2.

Electrical characteristics (curves)
Output characteristics Figure 3. Transfer characteristics

Figure 4.

Transconductance

Figure 5.

Collector-emitter on voltage vs temperature

Figure 6.

Gate charge vs gate-source voltage Figure 7.

Capacitance variations

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STGB19NC60S, STGP19NC60S Figure 8. Normalized gate threshold voltage vs temperature Figure 9.

Electrical characteristics Collector-emitter on voltage vs collector current

Figure 10. Normalized breakdown voltage vs temperature

Figure 11. Switching losses vs temperature

Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current

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Electrical characteristics Figure 14. Turn-off SOA

STGB19NC60S, STGP19NC60S Figure 15. Thermal impedance

Figure 16. IC vs. frequency

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Electrical characteristics

2.2

Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF)

The maximum power dissipation is limited by maximum junction to case thermal resistance:

Equation 1 PD = T / RTHJ-C considering T = TJ - TC = 125 C- 75 C = 50C

The conduction losses are:

Equation 2 PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @125C.

Power dissipation during ON & OFF commutations is due to the switching frequency:

Equation 3 PSW = (EON + EOFF) * freq. Typical values @ 125C for switching losses are used (test conditions: VCE = 480V, VGE=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see Note 1), while the tail of the collector current is included in the EOFF measurements.

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Test circuits

STGB19NC60S, STGP19NC60S

3

Test circuits
Figure 18. Gate charge test circuit

Figure 17. Test circuit for inductive load switching

Figure 19. Switching waveform

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Package mechanical data

4

Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

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Package mechanical data

STGB19NC60S, STGP19NC60S

D²PAK (TO-263) mechanical data

mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334

inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8

0079457_M

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Package mechanical data

TO-220 type A mechanical data

mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75

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Revision history

STGB19NC60S, STGP19NC60S

5

Revision history
Table 8.
Date 02-Jul-2007 13-Aug-2007 18-Sep-2007 18-Aug-2009

Document revision history
Revision 1 2 3 4 First release From target to preliminary version Added new section: Electrical characteristics (curves) Inser ted D2PAK package Changes

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