STB150NF04 STP150NF04
N-channel 40 V, 0.005 80 A, TO-220, D2PAK , STripFETTMII Power MOSFET
Features
Type STB150NF04 STP150NF04
VDSS 40 V 40 V
RDS(on) max < 0.007 < 0.007
ID 80 A 80 A
3 1
1 3 2
100% avalanche tested Standard level gate drive
D˛PAK
TO-220
Application
Switching applications
Description
This Power MOSFET is the latest development of STMicroelectronis unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking B150NF04 P150NF04 Package D˛PAK TO-220 Packaging Tape and reel Tube
Order code STB150NF04 STP150NF04
September 2009
Doc ID 14848 Rev 2
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Contents
STB150NF04, STP150NF04
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6
3 4 5 6
Test circuits
. . .. . .. . .. . .. . .. . .. . .. . .. . .. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID(1) ID (1) IDM
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 40 20 80 80 320 300 2 2 0.6 -55 to 175 Max. operating junction temperature Unit V V A A A W W/C V/ns J C
Ptot dv/dt (3) EAS
(4)
Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature
Tstg Tj
1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD 80A, di/dt 300 A/s, VDD= 80%V(BR)DSS 4. Starting Tj = 25 C, ID= 40 A, VDD=30 V
Table 3.
Symbol Rthj-case Rthj-pcb (1)
Thermal resistance
Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Value 0.5 35 Unit C/W C/W
1. When mounted on 1inch˛ FR-4 board, 2 oz of Cu
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Electrical characteristics
STB150NF04, STP150NF04
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = max rating VDS = max rating @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 40 A 2 0.005 Min. 40 1 10 100 4 0.007 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs(1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V, ID = 15 A VDS = 25 V, f =1 MHz VGS=0 VDD=32 V, ID=80 A, VGS=10 V (see Figure 14) Min. Typ. 90 3650 1145 400 118 20 45 Max. Unit S pF pF pF nC nC nC
-
-
150
-
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 25 V, ID = 40 A , RG = 4.7 VGS = 10 V (see Figure 13) Min. Typ. 15 150 70 45 Max. Unit ns ns ns ns
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Electrical characteristics
Table 7.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) ISD = 80 A, VGS = 0 ISD = 80 A, VGS = 0 ISD= 80 A, di/dt=100 A/s VDD = 25 V, Tj = 150 C (see Figure 15) Test conditions Min. Typ. Max. 80 320 Unit A A ns nC A ns nC A
Forward on voltage
-
1.3
Reverse recovery time Reverse recovery charge Reverse recovery current
-
73 170 4.6
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STB150NF04, STP150NF04
2.1
Figure 2.
ID(A)
Electrical characteristics (curves)
Safe operating area
HV42440
TJ=150C TC=25C Single pulse
Figure 3.
Thermal impedance
100
is rea on) s A S( thi x RD in a ion by M rat pe ited O im L
100s 1ms
10
10ms
1
0.1 0.1
1
10
VDS(V)
Figure 4.
ID(A) 225 200 175 150 125 100 75 50 25 0 0
Output characteristics
HV42470 VGS=10V
Figure 5.
ID(A) 225 200
Transfer characteristics
HV42475
VDS=10V
6V
175 150
5V
125 100 75
4V
50 25
1
2
3
4
5
6
7
8
9 VDS(V)
0
0
1
2
3
4
5
6
7
8
9 VGS(V)
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
RDS(on) ()
Static drain-source on resistance
HV42430
VGS=10V 7.0 6.5 6.0 5.5 5.0 4.5 4.0 0 10 20 30 40 50 60 70 80 ID(A)
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STB150NF04, STP150NF04 Figure 8. Gate charge vs gate-source voltage Figure 9.
C(pF)
9000 8000 7000 6000 5000 4000 3000 2000
Electrical characteristics Capacitance variations
HV42420 f=1MHz VGS=0
Ciss
Coss 1000 0 Crss 0 5 10 15 20 25 30 VDS(V)
Figure 10. Normalized gate threshold voltage vs temperature
VGS(th) (norm) HV42410 VDS=VGS ID=250A
Figure 11. Normalized on resistance vs temperature
1.00
0.90
0.80
0.70
0.60 -75 -50 -25 0 25 50 75 100 125 150 175 TJ(C)
Figure 12. Source-drain diode forward characteristics
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Test circuits
STB150NF04, STP150NF04
3
Test circuits
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
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Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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Package mechanical data
STB150NF04, STP150NF04
D˛PAK (TO-263) mechanical data
mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334
inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8
0079457_M
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STB150NF04, STP150NF04
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Packaging mechanical data
STB150NF04, STP150NF04
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0795 0.960 1.039 3. 937 1.197 BULK QTY 1000 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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Revision history
6
Revision history
Table 8.
Date 01-Jul-2008 25-Sep-2009
Document revision history
Revision 1 2 First release Inser ted device in TO-220 Changes
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STB150NF04, STP150NF04
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