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N-channel 7A - 600V DPAK PowerMESH™ IGBT

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STGD7NB60S
N-CHANNEL 7A - 600V DPAK Power MESHTM IGBT

TYPE S T GD 7 N B 6 0 S
s

VC ES 6 00 V

V C E(sat ) < 1.6 V

IC 7A

s s s s

HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")

3 1

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL
s

DPAK TO-252 (Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Sy m b o l V CE S VEC R VGE IC IC IC M ( · ) Ptot Tstg Tj P ar a m e te r C ol l e ct o r -E m i t t er Voltage (V G S = 0) R ev e r s e Battery Protection G at e - Em i t t e r Voltage C ol l e ct o r Current (continuous) at T c = 25 C C ol l e ct o r Current (continuous) at T c = 100 o C C ol l e ct o r Current (pulsed) T ot a l Dissipation at T c = 25 C D er a t in g Factor S to r a ge Temperature M a x. Operating Junction Temperature
o o

V a lu e 6 00 20 20 15 7 60 55 0 . 44 -6 5 to 150 1 50

U n it V V V A A A W W /o C
o o

C C

(·) Pulse width limited by safe operating area

November 1999

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STGD7NB60S
THERMAL DATA
R t h j - c a se R t hj -amb R t h c - si n k T h e r m al Resistance Junction-case T h e r m al Resistance Junction-ambient T h e r m al Resistance Case-sink Max Max Typ 2. 2 7 10 0 1. 5
o o

C/W C/W o C/W

ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF
S ym b o l V B R (CE S ) V B R (E CR ) IC ES IG E S P a r am e t e r C o l le c t o r- E m i tt e r B r e ak d o w n Voltage E m i t te r - C ol l ec t o r B r e ak d o w n Voltage C o l le c t o r cut-off (V G E = 0) G a t e -E m i t te r Leakage C u r re n t (V C E = 0) T e s t Conditions I C = 250 A I C = 1 mA V GE = 0 VG E = 0 T j = 25 o C T j = 125 o C V CE = 0 Min. 600 20 10 100 100 T yp . Max. U n it V V A A nA

V C E = Max Rating V C E = Max Rating V GE = 20 V

ON ()
S ym b o l V GE(t h) V CE (S A T ) P a r am e t e r G a t e Threshold V o l ta g e C o l le c t o r- E m i tt e r S a t u ra t io n Voltage V CE = V G E V GE = 15 V V GE = 15 V V GE = 15 V T e s t Conditions I C = 250 A IC = 3 A IC = 7 A IC = 7 A Min. 2.5 1 1. 2 1. 1 T yp . Max. 5 1.4 1.6 U n it V V V V

T j = 125 o C

DYNAMIC
S ym b o l gf s C i es C oes C res QG ICL P a r am e t e r F o r w ar d T r a n sc o n d uc t a n c e I n p ut Capacitance O u t p ut Capacitance R e v e rs e Transfer C a p a c it a n ce G a t e Charge L a t c hi n g Current T e s t Conditions V C E =25 V V C E = 25 V IC = 7 A f = 1 MHz VG E = 0 Min. 4 61 0 65 12 33 15 780 85 15 T yp . Max. U n it S pF pF pF nC A

V C E = 400 V V cl a m p = 480 V T j = 150 o C

IC = 7 A

V G E = 15 V RG=1k

SWITCHING ON
S ym b o l t d(on ) tr ( di / d t )o n Eon P a r am e t e r D e l a y Time R i s e Time T u r n -o n Current Slope T u r n -o n S w i t c hi n g Losses T e s t Conditions V C C = 480 V V GE = 15 V V C C = 480 V R G = 1 K T j = 125 o C IC = 7 A R G = 1 K IC = 7 A V G E = 15 V Min. T yp . 0. 7 0 .4 6 8 0. 4 Max. U n it s s A/s mJ

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STGD7NB60S
ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF
S ym b o l tc t r (v o f f ) tf E o f f (* * ) tc t r (v o f f ) tf E o f f (* * ) P a r am e t e r T e s t Conditions IC = 7 A V G E = 15 V Min. T yp . 2. 2 1. 2 1. 2 3. 5 3. 8 1. 2 1. 9 5. 3 Max. U n it s s s mJ s s s mJ

V C C = 480 V C r o s s -O v e r Time O f f Voltage Rise Time R G E = 100 F a l l Time T u r n -o f f Switching Loss V C C = 480 V C r o s s -O v e r Time O f f Voltage Rise Time R G E = 100 F a l l Time T j = 125 o C T u r n -o f f Switching Loss

IC = 7 A V G E = 15 V

(·) Pulse width limited by safe operating area () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)

Thermal Impedance

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STGD7NB60S
Output Characteristics Transfer Characteristics

Transconductance

Collector-Emitter On Voltage vs Temperature

Collector-Emitter On Voltage vs Collector Current

Gate Threshold vs Temperature

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Normalized Breakdown Voltage vs Temperature Capacitance Variations

Gate Charge vs Gate-Emitter Voltage

Off Losses vs Gate Resistance

Off Losses vs Temperature

Off Losses vs Collector Current

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STGD7NB60S
Switching Off Safe Operatin Area

Fig. 1: Gate Charge test Circuit

Fig. 2: Test Circuit For Inductive Load Switching

Fig. 3: Switching Waveforms

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STGD7NB60S

TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397

DIM.

H

A

C2

C

DETAIL "A"

A1

L2

D DETAIL "A"
B

=

=

3

B2

=

=

G

E

2

L4

1

=

=

A2

0068772-B

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STGD7NB60S

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

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