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N-channel 3A - 600V D2PAK PowerMESH™ IGBT

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STGB3NB60SD
N-CHANNEL 3A - 600V D2PAK Power MESHTM IGBT
TYPE STGB3NB60SD
s

VC E S 600 V

VCE(sat) <1.5 V

Ic 3A

s s s s s

HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VER Y LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")

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D2PAK TO-263 (suffix"T4")

DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS s GA S DISCHARGE LAMP s S TA TI C RELAYS s M OTO R CONTROL

ABSOLUTE MAXIMUM RATINGS
Symbol VCES VGE IC IC ICM(·) Ptot Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuos) at Tc=25C Collector Current (continuos)at Tc=100C Collector Current (pulsed) Total Dissipation at Tc = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 6 3 25 70 0.46 60 to 175 175 Unit V V A A A W W/C C C

(·)Pulse width limited by safe operating area.

November 2000

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STGB3NB60SD
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 2.14 62.5 0.5 C/W C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol VBR(CES) ICES IGSS Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A VGE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA

VCE = Max Rating Tj = 25 C VCE = Max Rating Tj = 125 C VGS = 20V V CE = 0

ON (*)
Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE IC = 250 A Min. 2.5 1 1.2 1.1 Typ. Max. 5 1.5 Unit V V V V

IC = 1.5 A VGE = 15 V IC = 3 A VGE = 15 V VGE = 15 V ID = 3 A Tj = 125 C

DYN AMIC
Symbol gfs Cies Coes Cres QG Q GE QGC ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitances Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Vclamp = 480 V Tj=150 C RG = 1 K 12 VCE=480V IC=3 A VGE=15 V Test Conditions VCE = 25 V IC = 3 A Min. 1.7 Typ. 2.5 255 30 5.6 18 5.4 5.5 330 40 7 Max. Unit S pF pF pF nC nC nC A

VCE = 25V f = 1 MHz VGE = 0

SW ITCHIN G ON
Symbol td(on) tr (di/dt)on Eon Parameter DelayTime Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V VGE = 15 V VCC = 480 V VGE = 15 V Tj=125 C IC = 3 A RG = 1 k IC = 3 A RG = 1 k Min. Typ. 125 150 50 1100 Max. Unit ns ns A/s J

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STGB3NB60SD
ELECTRICAL CHARACTERISTICS (continued) SW ITCHIN G OFF
Symbol tc tr(Voff) td(Voff) tf Eoff(**) tc tr(Voff) td(Voff) tf Eoff(**) Parameter Cross-Over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Cross-Over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Test Conditions VCC = 480 V RGE = 1 k IC = 3 A VGE = 15 V Min. Typ. 1.8 1.0 3.4 0.72 1.15 2.8 1.45 3.6 1.2 1.8 Max. Unit s s s s mJ s s s s mJ

VCC = 480 V RGE = 1 k Tj = 125 C

IC = 3 A VGE = 15 V

COLLECTOR-EMITTER DIODE
Symbol If Ifm Vf trr Qr r Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A If = 1 A If = 3 A di/dt = 100 A/s VR = 200 V Tj = 125 C 1.55 1.15 1700 4500 9.5 Test Conditions Min. Typ. Max. 3 25 1.9 Unit A A V V ns nC A

(·)Pulse width limited by max. junction temperature (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. ()Losses Include Also The Tail (Jedec Standardization)

Thermal Impedance

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STGB3NB60SD
Output Characteristics Transfer Characteristics

Transconductance

Collector-Emitter on Voltage vs Temperature

Collector-Emiter on Voltage vs Collector Current

Gate Threshold vs Temperature

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STGB3NB60SD
Normalized Breakdown Voltage vs Temperature Capacitance Variations

Gate charge Gate-Emitter Voltage

Off Switching Losses vs Ic

Off Switching Losses vs Tj

Swittching Off Safe Operating Area

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STGB3NB60SD
Diode Forward vs Tj Diode Forward Voltage

Fig. 1: Gate Charge test Circuit

Fig. 2 Test Circuit For Inductive Load Switching

Fig. 3: Switching Waveforms

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STGB3NB60SD
D2PAK MECHANICAL DATA

DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2

mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10 8.5 4.88 15 1.27 1.4 2.4 0.4 0 8 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 10.4 0.393 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352

inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.334 0.208 0.625 0.055 0.068 0.126 0.015

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STGB3NB60SD

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http ://www.st.com

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Document Number: 7059

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