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N-channel 10A - 600V - TO-220FP PowerMESH™ IGBT

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STGF10NB60SD
N-channel 10A - 600V - TO-220FP PowerMESHTM IGBT
General features
Type STGF10NB60SD

VCES 600V

IC VCE(sat) (Max)@ 25C @100C <1.8V 7A

Hight input impedance (voltage driven) Low on-voltage drop High current capability Co-packaged with turboswitchTM antiparallel diode
3 1 2

TO-220FP

Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).

Internal schematic diagram

Applications

Light dimmer Static relays Motor control

Order codes
Part number STGF10NB60SD Marking GF10NB60SD Package TO-220FP Packaging Tube

May 2006

Rev 2

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www.st.com 13

Contents

STGF10NB 60SD

Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6

3 4 5

Test circuit

. . .. . .. . .. . .. . .. . .. . .. . .. . .... 9

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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STGF10NB60SD

Electrical ratings

1

Electrical ratings
Table 1.
Symbol VCES IC IC ICM
(1)

Absolute maximum ratings
Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25C Collector current (continuous) at 100C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25C Insulation withstand voltage A.C.(t = 1sec;Tc=25C) Operating junction temperature 55 to 150 Storage temperature C Value 600 20 7 100 20 25 2500 Unit V A A A V W V

VGE PTOT VISO Tstg Tj

1. Pulse width limited by max. junction temperature.

Table 2.
Symbol Rthj-case Rthj-amb

Thermal resistance
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Value 5 62.5 Unit C/W C/W

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Electrical characteristics

STGF10NB60SD

2

Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol VBR(CES) VBR(CES)

Static
Parameter Test condictions Min. 600 20 1.15 1.35 1.25 2.5 Typ. Max. Unit V V V V V V A A nA S

Collector-emitter breakdown IC = 250A, VGE = 0 voltage Collector-emitter breakdown IC = 1mA, VGE = 0 voltage Collector-emitter saturation voltage Gate threshold voltage Collector-emitter leakage current (VCE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VGE =15V, IC = 5A, Tj= 25C VGE =15V, IC = 10A, Tj= 25C VGE =15V, IC = 10A, Tj= 125C VCE = VGE, IC = 250A VCE = Max rating ,Tj =25 C VCE = Max rating ,Tj =125 C VGE = 20V , VCE = 0 VCE = 25 V , IC =10 A

VCE(SAT) VGE(th) ICES IGES gfs

1.8

5 10 100 100

5

Table 4.
Symbol Cies Coes Cres Qg ICL

Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-off SOA minimum current Test condictions Min. Typ. 610 65 12 33 20 Max. Unit pF pF pF

VCE = 25V, f = 1 MHz, VGE= 0

VCE = 400V, IC = 10 A, VGE = 15V , Vclamp= 480V, RG= 1k Tj= 125C

nC A

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STGF10NB60SD

Electrical characteristics

Table 5.
Symbol td(on) tr (di/dt)on Eon (1) tr(Voff) td(off) tf Eoff (2) tr(Voff) td(off) tf Eoff (2)

Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on switching losses Off voltage rise time Turn-off delay time Current fall time Turn-off switching losses Off voltage rise time Turn-off delay time Current fall time Turn-off switching losses Test condictions VCC = 480 V, IC = 10 A RG = 1K , VGE = 15 V Tj= 25C (see Figure 15) Min. Typ. 0.7 0.46 8 0.6 2.2 1.2 1.2 5.0 3.8 1.2 1.9 8.0 Max. Unit s s A/s mJ s s s mJ s s s mJ

VCC = 480 V, IC = 10 A RG = 1K , VGE = 15 TJ=25C (see Figure 15)

VCC = 480 V, IC = 10 A RG = 1K , VGE = 15 Tj=125 C (see Figure 15)

1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current

Table 6.
Symbol If Ifm Vf t rr Qrr I rr m

Collector-emitter diode
Parameter Forward current Forward current pulsed Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current If = 3.5 A If = 3.5 A, Tj = 125 C If = 7 A ,VR = 20 V, Tj =125C, di/dt =100A/s (see Figure 18) 1.4 1.15 50 70 2.7 Test condictions Mi n Typ. Max 7 56 1.9 Unit A A V V ns nC A

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Electrical characteristics

STGF10NB60SD

2.1
Figure 1.

Electrical characteristics (curves)
Output characteristics Figure 2. Transfer characteristics

Figure 3.

Transconductance

Figure 4.

Collector-emitter on voltage vs temperature

Figure 5.

Collector-emitter on voltage vs collector current

Figure 6.

Normalized gate threshold vs temperature

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STGF10NB60SD Figure 7. Normalized breakdown voltage vs temperature Figure 8.

Electrical characteristics Gate charge vs gate-emitter voltage

Figure 9.

Capacitance variations

Figure 10. Switching losses vs temperature

Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current

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Electrical characteristics Figure 13. Thermal impedance Figure 14. Turn-off SOA

STGF10NB60SD

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STGF10NB60SD

Test circuit

3

Test circuit
Figure 16. Gate charge test circuit

Figure 15. Test circuit for inductive load switching

Figure 17. Switching waveforms

Figure 18. Diode recovery times waveform

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Package mechanical data

STGF10NB60SD

4

Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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STGF10NB60SD

Package mechanical data

TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø

A

B

L3 L6 L7
F1 F

D

G1 H
F2
L2 L5

E
123
L4

G

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Revision history

STGF10NB60SD

5

Revision history
Table 7.
Date 15-May-2006

Revision history
Revision 2 New template Changes

12/13

STGF10NB60SD

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