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STMicroelectronics Introduces 250A Power MOSFET Combining Package and Process Advances for Higher Motor-Drive Efficiency

First discrete power MOSFET to combine ribbon bonding with surface-mount power package delivers 1.5 milliohm on-resistance with high current handling for 55V applications

Click for larger image Geneva, July 16,2008 - Taking aim atreduced operating costs and lowering the  environmental footprint in applications such as electric vehicles, STMicroelectronics (NYSE: STM), a world leader in power applications, has introduced a 250A surface-mount power MOSFET with the lowest on-resistance in the market, to minimize energy conversion losses and enable higher performance.

The new device, the STV250N55F3, is the first power MOSFET to combine ST’s PowerSO-10™ package with ribbon bonding to achieve ultra-low die-free package resistance. Implemented in ST’s high-density STripFET III™ fabrication process, the device offers a typical on-resistance of 1.5 milliohms. Further benefits of STripFET III include low switching losses and rugged avalanche characteristics. The nine-lead source connection also reduces on-resistance, in addition to aiding heat dissipation. Overall, the package is rated for 300W dissipation at 25 degrees C.

The high current rating allows engineers to design-out multiple parallel MOSFETs to save board space and BOM costs. Standard driving thresholds also simplify driver-circuit design. The STV250N55F3 is rated for applications up to 55V.

The ability to operate at temperatures up to 175 degrees C makes the STV250N55F3 suitable for use in high-current electric-traction applications such as forklift trucks, golf carts and pallet trucks, as well as lawnmowers, wheelchairs, and electric bikes. Reliability and robustness are assured through 100% avalanche testing both at wafer level as well as on finished products. In the future, the device will be eligible for automotive-grade applications.

Within the same family, ST also has the 55V STV200N55F3, which implements a four-lead source connection and is rated for 200A continuous drain current.

Samples of the STV250N55F3 are available immediately. Volume production is scheduled for Q3 2008 at $2.50 for 10,000 pieces.

Further information is available at www.st.com/pmos

Click here for the high-resolution photo


About STMicroelectronics
STMicroelectronics is a global leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence markets. The Company's shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. In 2007, the Company's net revenues were $10.0 billion. Further information on ST can be found at www.st.com.
Information last updated Jan 2008




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